• Part: RJK6002DPD
  • Description: Silicon N Channel MOS FET High Speed Power Switching
  • Manufacturer: Renesas
  • Size: 97.47 KB
Download RJK6002DPD Datasheet PDF
Renesas
RJK6002DPD
Features - Low on-resistance - Low leakage current - High speed switching Outline RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain 2, 4 1 12 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 600 ±30 2 4 2 4 1 0.05 30 4.17 150 - 55 to +150 Unit V V A A A A A m J W °C/W °C °C Rev.1.00 Nov 09, 2006 page 1 of 3 .. Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current...